2n7002 features free from secondary breakdown low power drive requirement ease of paralleling low c iss and fast switching speeds excellent thermal stability integral source-drain diode high input impedance and high gain complementary n- and p-channel devices applications motor controls converters ampli? ers switches power supply circuits drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) ? ? ? ? ? ? ? ? ? ? ? ? ? ? general description the supertex 2n7002 is an enhancement-mode (normally- off) transistor that utilizes a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coef? cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ordering information device package bv dss /bv dgs (v) r ds(on) (max) () i d(on) (min) (a) 2n7002 to-236ab (same as sot-23) 60 7.5 0.5 2N7002-G absolute maximum ratings parameter value drain to source voltage bv dss drain to gate voltage bv dgs gate to source voltage 30v operating and storage temperature -55c to +150c soldering temperature 1 +300c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. notes: 1. distance of 1.6mm from case for 10 seconds. pin con? guration n-channel enhancement-mode vertical dmos fets -g indicates package is rohs compliant (green) to-236ab (top view) gate source drain product marking = 2-week alpha date code 702
2 2n7002 electrical characteristics (t a =25c unless otherwise speci? ed) symbol parameter min typ max units conditions bv dss drain-to-source breakdown voltage 60 - - v v gs = 0v, i d = 10a v gs(th) gate threshold voltage 1.0 - 2.5 v v gs = v ds , i d = 250a ?v gs(th) change in v gs(th) with temperature - - -5.5 mv/ o cv gs = v ds , i d = 250a i gss gate body leakage current - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 1.0 a v gs = 0v, v ds = max rating - - 500 v gs = 0v, v ds = 0.8max rating, t a = 125 o c i d(on) on-state drain current 500 - - ma v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - - 7.5 v gs = 5.0v, i d = 50ma - - 7.5 v gs = 10v, i d = 500ma ?r ds(on) change in r ds(on) with temperature - - 1.0 %/ o cv gs = 10v, i d = 500ma g fs forward transconductance 80 - - mmho v ds = 25v, i d = 500ma c iss input capacitance - - 50 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - - 25 c rss reverse transfer capacitance - - 5 t (on) turn-on time - - 20 ns v dd = 30v, i d = 200ma, r gen = 25? t (off) turn-off time - - 20 v sd diode forward voltage drop - 1.2 - v v gs = 0v, i sd = 200ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 800ma notes: 1.all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2.all a.c. parameters sample tested. switching waveforms and test circuit thermal characteristics device package i d (continuous) * (ma) i d (pulsed) (ma) power dissipation @t a = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr * (ma) i drm (ma) 2n7002 to-236ab 115 800 0.36 200 350 115 800 notes: * i d (continuous) is limited by max rated t j . 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v
3 2n7002 typical performance curves output characteristics 2.0 1.6 1.2 0.8 0.4 0 v ds (volts) i d ) s e r e p m a ( saturation characteristics v ds (volts) i d ) s e r e p m a ( maximum rated safe operating area 0.1 100 10 1 1.0 0.1 0.01 0.001 v ds (volts) i d ) s e r e p m a ( thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1.0 t p (seconds) transconductance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.2 g s f ) s n e m e i s ( i d (amperes) power dissipation vs. temperature 0150 100 50 0.5 0.4 0.3 0.2 0.1 0 125 75 25 t a ( o c) p d ) s t t a w ( sot-23 t a = 25 o c p d = 0.36w sot-23 t a = -55 o c t a = 25 o c v ds = 25v 0102030 50 40 4v 3v 0246 10 8 25 o c 125 o c 7v 9v 0.6 1.0 0.8 10v 8v 6v 5v 2.0 1.6 1.2 0.8 0.4 0 4v 3v 7v 9v 10v 8v 6v 5v sot-23 (dc) sot-23 (pulsed) v gs = v gs =
4 2n7002 typical performance curves (cont.) gate drive dynamic characteristics q g (nanocoulombs) v s g ) s t l o v ( t j ( o c) v ) h t ( s g ) d e z i l a m r o n ( ) n o ( s d r) d e z i l a m r o n ( v gs(th) and r ds(on) variation with temperature on-resistance vs. drain current r ) n o ( s d ) s m h o ( v b s s d ) d e z i l a m r o n ( t transfer characteristics v gs (volts) i d ) s e r e p m a ( capacitance vs. drain-to-source voltage 50 ) s d a r a f o c i p ( c v ds (volts) i d (amperes) bv dss variation with temperature 0 10203040 25 0 0246810 2.0 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 1.1 1.0 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 10 8 6 4 2 0 0.2 0.4 0.6 0.8 1.0 -50 0 50 100 150 30 pf v ds = 40v v ds = 10v v gs = 5v v gs = 10v t a = -55 o c v ds = 25v 125 o c 0 0.5 1.0 1.5 2.5 2.0 f = 1mhz c iss c oss c rss 0.9 90 pf 2.0 1.6 1.2 0.8 0.4 0 v gs(th) @ 1ma 25 o c 0 r ds(on) @ 10v, 0.5a t j ( o c)
5 2n7002 (the package drawing(s) in this data sheet may not re? ect the most current speci? cations. for the latest package outline information go to http://www.supertex.com/packaging.html .) to-236ab package outline 2 0.0173 0.0027 (0.4394 0.0685) 0.0906 0.0079 (2.299 0.199) 0.0754 0.0053 (1.915 0.135) 0.0512 0.004 (1.3004 0.1016) 0.0207 0.003 (0.5257 0.0762) 0.115 0.005 (2.920 0.121) 0.0400 0.007 (1.016 0.178) 0.0210 0.003 (0.5334 0.076) 0.0382 0.003 (0.9690 0.0762) 0.0035 0.0025 (0.0889 0.0635) 0.0043 0.0009 (0.1092 0.0229) nom 0.0197 (0.50) dimensions in inches (dimensions in millimeters) measurement legend = 3 1 top view side view end view doc.# dsfp-2n7002 a042507
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